VisIC’s core technology is based the un-doped normally-off gallium nitride (GaN) structure implemented currently on the GaN-on-SiC semiconductor technology. VisIC’s developments are further applicable to GaN-on-Si as well. Unlike silicon (Si) and gallium arsenide (GaAs), GaN, as a wide band-gap material, exhibits superior advantages in all power applications across the switching frequencies from several Hz to hundreds of GHz. This technology was further proven to be superior over other wide band-gap semiconductors, such as pure SiC, by minimizing switching losses and fabrication costs. The company has managed to address innovative processing challenges and to develop its protected IP based on a vast knowhow. VisIC succeeded to overcome major obstacles required for power switching applications by obtaining a GaN transistor with a normally-off behavior (that is, no electrical current flows upon zero bias control voltage) without sacrificing the various benefits of the GaN material, thus ensuring high breakdown voltages and high current densities.
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Type
Private
HQ
Rehovot, IL
Founded
2010
Size (employees)
20 (est)
VisIC Technologies was founded in 2010 and is headquartered in Rehovot, IL
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Key People/Management at VisIC Technologies

Yuval Rozen

Yuval Rozen

CFO

VisIC Technologies Office Locations

VisIC Technologies has an office in Rehovot
Rehovot, IL (HQ)
2 Derech Meir Weisgal
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VisIC Technologies Financials and Metrics

Summary Metrics

Founding Date

2010

Total Funding

$11.6 m

Latest funding size

$11.60 m

Time since last funding

a year ago

Investors

VisIC Technologies's latest funding round in January 2017 was reported to be $11.6 m. In total, VisIC Technologies has raised $11.6 m
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