VisIC’s core technology is based the un-doped normally-off gallium nitride (GaN) structure implemented currently on the GaN-on-SiC semiconductor technology. VisIC’s developments are further applicable to GaN-on-Si as well. Unlike silicon (Si) and gallium arsenide (GaAs), GaN, as a wide band-gap material, exhibits superior advantages in all power applications across the switching frequencies from several Hz to hundreds of GHz. This technology was further proven to be superior over other wide band-gap semiconductors, such as pure SiC, by minimizing switching losses and fabrication costs. The company has managed to address innovative processing challenges and to develop its protected IP based on a vast knowhow. VisIC succeeded to overcome major obstacles required for power switching applications by obtaining a GaN transistor with a normally-off behavior (that is, no electrical current flows upon zero bias control voltage) without sacrificing the various benefits of the GaN material, thus ensuring high breakdown voltages and high current densities.
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