GaN Systems is a fabless semiconductor company that is the first place systems designers go to realize all the benefits of gallium nitride in their power conversion and control applications. To overcome silicon’s limitations in switching speed, temperature, voltage and current, the company develops the most complete range of gallium nitride power switching transistors for a wide variety of markets. GaN Systems’ unique Island Technology® addresses today’s challenges of cost, performance, and manufacturability resulting in devices that are smaller and more efficient than other GaN design approaches. The company is headquartered in Ottawa, Canada. The Company also leverages existing multi-sourced manufacturing processes due to its transportable, fabless model, and through additional innovations, makes it easy to incorporate gallium nitride into any design. GaN Systems is run by a seasoned semiconductor team with decades of industry experience and a track record of repeated success. The Company stands to do more for gallium nitride adoption in power conversion than any other.
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Ottawa, CA
Size (employees)
54 (est)+2%
GaN Systems was founded in 2008 and is headquartered in Ottawa, CA
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Key People/Management at GaN Systems

Jim Witham

Jim Witham

CEO at GaN Systems Inc.
Larry Spaziani

Larry Spaziani

Vice President of Sales & Marketing
Maryam Abouie PhD

Maryam Abouie PhD

Senior Materials Reliability Engineer

GaN Systems Office Locations

GaN Systems has offices in Shanghai, Hsinchu City, Ottawa, Ann Arbor and in 3 other locations
Ottawa, CA (HQ)
1145 Innovation Dr
Shanghai, CN
500 Hong Bao Shi Lu
München-Flughafen, DE
18 Terminalstraße Mitte
Hsinchu City, TW
1st Road Hsinchu Science Park
Ann Arbor, US
150 2723 S State St
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GaN Systems Financials and Metrics

Summary Metrics

Founding Date


Total Funding

$20 m

Latest funding size

$20 m

Time since last funding

3 years ago


GaN Systems's latest funding round in May 2015 was reported to be $20 m. In total, GaN Systems has raised $20 m
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GaN Systems Online and Social Media Presence

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GaN Systems News and Updates

GaN Systems' GS61004B GaN HEMT Complete Teardown Report 2018 with Comparison of Standard 100V Si MOSFETs and Low-Voltage GaN on Si HEMT

DUBLIN, June 19, 2018 /PRNewswire/ -- The "GaN Systems GS61004B GaN HEMT Complete Teardown Report" report has been added to's offering. There are only two main players in low-voltage GaN: EPC and GaN Systems, a fact mainly due to the complexity of using a...

At APEC 2018, GaN Systems Unveils 100 V/120 A Power Transistor, Reports 10,000+ Hours of Qualification Testing for GaN E-HEMT Devices

The company unveiled industry’s highest current and power efficient 100 V GaN power transistor, and announced it has surpassed 10,000 hours of qualification testing for its GaN E-HEMT devices.

GaN Systems Introduces Record-Setting 100 V/120 A GaN Power Transistor At APEC 2018

The 100 V, 120 A, 5 mO GaN E-HEMT device is 1.3X the current rating of GaN Systems’ own 90 A part and 2.4X-to-4.6X the current rating of other high current GaN in the industry.

APEC 2018: GaN Systems to Expand Power Transistor Portfolio

The company will introduce devices for consumer and data center applications and new design tools
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